Recently, the Shanghai Securities News, affiliated with Xinhua News Agency, has authoritatively reported on the remarkable achievements made by numerous Sci-tech Innovation Board (STAR Market) enterprises in 2024. These achievements bear witness to the rise of China's scientific and technological strength and also highlight the profound foundation and outstanding capabilities of each enterprise. Among these outstanding enterprises, SICC has stood out with its own hard-core strength, becoming the focus of attention in the industry and writing a magnificent chapter in the semiconductor field.

In the current surging wave of scientific and technological innovation, China's STAR Market companies are shouldering the significant mission of promoting scientific and technological innovation and industrial upgrading. Just like numerous shining stars gathering into a vast galaxy, they are bravely tackling tough challenges in various key fields, striving to be the “main force” in overcoming “bottleneck” technologies and the “pioneers” in developing new productive forces.

In November 2024, SICC released the industry's first 12-inch silicon carbide substrate product, marking the official entry of the wide bandgap semiconductor industry into a new era of ultra-large-size silicon carbide substrates. The 12-inch silicon carbide substrate is an ultra-large-size silicon carbide semiconductor material independently developed by SICC. It can further expand the area available for chip manufacturing on a single wafer and significantly increase the yield of qualified chips. Under the same production conditions, the 12-inch silicon carbide substrate can significantly increase production, reduce unit costs, and further enhance economic benefits, making it possible for the larger-scale application of silicon carbide materials.

The release of the 12-inch product marks our official entry into a new era of ultra-large-size silicon carbide substrates. This is not only a powerful testament to SICC's technological research and development strength but also an important milestone for China's semiconductor industry to achieve a leapfrog development in the field of key basic materials.

Facing the future, SICC will continue to be driven by innovation, forge ahead, continue to deeply cultivate the field of third-generation semiconductors, continuously expand the boundaries of technology, and contribute more powerful strength to the development of new productive forces.