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SICC Won the Silver Award of the 25th China Patent Award
2024-12-28

On December 23, 2024, the National Intellectual Property Administration released the preliminary award results of the 25th China Patent Award. The patent "A Hig-Flatness, Low-Damage Large-Diameter Singl-Crystal Silicon Carbide Substrate" (Patent No.: ZL201811205291.2) applied for by SICC as the patentee won the Silver Award of the 25th China Patent Award.


The 25th China Patent Silver Award-Winning Project


The China Patent Award is a national-level award jointly selected by the National Intellectual Property Administration and the World Intellectual Property Organization (WIPO) of the United Nations. It is the highest honor in the field of patents in China. It focuses on strengthening the creation, protection, and application of intellectual property rights, promoting high-quality economic development, and encouraging and commending patent holders and inventors (designers) who have made outstanding contributions to technological (design) innovation and economic and social development.


The winning patent has leading advantages in the performance improvement and mass production preparation of 8-inch silicon carbide substrates, such as surface shape, high flatness, and low roughness. It has broken through the processing technology of large-size and high- quality silicon carbide semiconductor substrates, achieved domestic substitution, and has the advantage of leading the development of the industry. The 8-inch high-quality silicon carbide semiconductor substrate is widely used in the fields of electric vehicles, photovoltaics, energy storage, 5G, etc., and has significant economic, social, and environmental benefits.

 


SICC has always been at the forefront of scientific and technological innovation. Guided by the major strategic needs of the country, it has deeply cultivated the field of semiconductor materials and is committed to creating silicon carbide products with international competitiveness. In the future, SICC will continue to adhere to the concept of independent innovation, continuously strengthen the protection of intellectual property rights, use intellectual property rights to protect core technologies, continuously improve its core competitiveness, break the foreign monopoly, and contribute to the prosperity and development of China's semiconductor industry.




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