In March 2025, Semicon China grandly opened in Shanghai. This scientific and technological event brought together more than 1,300 semiconductor enterprises. At the Asian Compound Semiconductor Conference held concurrently,SICC made a stunning appearance with a full series of 12-inch silicon carbide substrate products, including 12-inch high-purity semi-insulating silicon carbide substrates, 12-inch conductive P-type and 12-inch conductive N-type silicon carbide substrates, becoming the focus of the audience.
According to the latest statistics from the internationally renowned media Fuji Keizai in Japan, in 2024, SICC's global market share soared to 22.8%, a significant increase compared with the 12% global market share in 2023, firmly ranking among the first international echelon.
Industry Resonance: Building a Low-carbon Future Together
On March 25th, as a leading enterprise in the silicon carbide industry, SICC was invited by SEMI to deliver a speech at the opening ceremony of the Asian Compound Semiconductor Conference. It shared cutting-edge achievements such as the mass production experience of ultra-large-size substrates and the preparation process by the liquid phase method, and discussed the technological trends of silicon carbide together with the upstream and downstream of the global industrial chain. Through open collaboration, the company is driving the industry's transition from "size upgrading" to "comprehensive performance optimization", and helping the green industry to accelerate its low-carbon process.
Technical Leadership: The Full-line 12-inch Product Matrix Fully Enters the Era of Large-size Products
As an innovator in the global silicon carbide substrate technology, following the world premiere of the 12-inch conductive substrate at Semicon Europe in Munich in November 2024, SICC has once again stunned the industry with its full-size product matrix. The full series of 6-inch, 8-inch, and 12-inch silicon carbide substrates made their collective debut for the first time. Among them, the 12-inch high-purity silicon carbide substrate and the 8/12-inch P-type silicon carbide substrates were exhibited globally for the very first time.
The 12-inch products have a continuously expanded area compared with the 8-inch ones. The output of chips per single wafer has jumped 2.5 times. The expansion of the size effectively reduces the unit cost, which is an inevitable trend in the development of the industry. This technological feast not only announces that the silicon carbide industry has officially entered the "12-inch era", but also marks that SICC has firmly mastered the breakthroughs in the entire technology chain, including crystal growth, defect control, processing and detection, and component self-manufacturing. It also heralds that 2025 will be the first year of breakthroughs in large-size technology.
The technological fission of silicon carbide products will also support a variety of high-voltage application scenarios such as new energy vehicles, photovoltaic energy storage, smart grids, and 5G base stations. It will give rise to the vigorous development of multiple emerging fields, including AR glasses, satellite communication, and the low-altitude economy, and contribute to the computing power revolution in the era of the Internet of Everything.
Market Breakthrough: Dual-driven by Production Capacity and Internationalization, Aiming at Becoming the Global Leader
At a crucial juncture in the reconstruction of the global silicon carbide substrate market landscape, SICC has achieved breakthrough growth driven by the dual engines of "production capacity expansion + quality assurance". According to the latest report "The Current Situation and Future Outlook of the Market for Next-generation Power Semiconductors & Power Electronics-related Equipment (2025 Edition)" released by the internationally renowned media Fuji Keizai in Japan, SICC's global market share soared to 22.8% in 2024, firmly ranking among the first international echelon. Behind this achievement is the large-scale delivery capacity of conductive substrates at the Lingang Base in Shanghai, as well as the stable control of product yield and quality. It has received high scores within the international top-tier Tier 1 supplier system, winning the trust and good reputation of industry customers.
From breaking through the bottleneck of localization for 6-inch products to the global debut of the full series of 12-inch products, this technological fission has not only reconstructed the value chain of the silicon carbide industry, but also, driven by the dual engines of energy transformation and the digital economy, provided crucial material support for the global carbon neutrality goal and the construction of a smart society. Relying on the ultra-large size technology as a fulcrum, SICC is now tapping into the trillion-level blue ocean market of the third-generation semiconductor industry.
SICC:Let the world see the power of China's "chip"!
